InGaAsP/InP量子阱中电子-电子散射率研究  

The study on the electron-electron scattering rate in InGaAsP/InP quantum well

作　　者：李正[1] 王海龙[1] 陈莎[1] 陈丽[1] 

机构地区：[1]曲阜师范大学物理工程学院,山东曲阜273165

出　　处：《电子技术（上海）》2016年第9期4-7,3,共5页Electronic Technology

摘　　要：在有效质量近似下,利用打靶法和费米黄金法则计算出In1-xGaxAsyP1-y/InP量子阱中两个及多个电子从第一激发态子带到基态子带的散射率及平均散射率。计算结果表明,In1-xGaxAsyP1-y/InP量子阱中电子-电子的散射率随电子初态能的增大而降低,电子-电子的平均散射率随As组分和子带能级差的增大而降低,随Ga组分、阱宽和载流子浓度的增大而升高。当电子温度较低时,散射率和平均散射率随电子温度的降低而降低,当电子温度较高时,散射率和平均散射率会随着电子温度的升高而缓慢降低。Within the framework of effective mass approximation, the scattering rate and the mean scattering rate for two electrons and multiple electrons initially in the first excited subband and finally in the ground subband in Inl-xGaxAsyPl-y/InP quantum well is calculated adopting the shooting method and Fermi＇s golden rule. The results show that in Inl-xGaxAsyPl-y/InP quantum well, the scattering rate for electron-electron decreases with increasing initial electron energy. The mean scattering rate for electron-electron decreases with increasing As composition and subband separation, increases with increasing Ga composition, well width and carrier density. When the electron temperature is relatively low, the scattering rate and the mean scattering rate decrease with decreasing electron temperature. When the electron temperature is relatively high, the scattering rate and the mean scattering rate decrease slowly as the electron temperature rises.

关 键 词：In1-xGaxAsyP1-y/InP量子阱 电子 费米黄金法则 散射率 

分 类 号：TN304.26[电子电信—物理电子学]