Analysis of Effect of Zn(O,S) Buffer Layer Properties on CZTS Solar Cell Performance Using AMPS  

作　　者：林灵燕 邱羽 张禹 张昊 

机构地区：[1]Institute of Advanced Photovoltaics,Fujian Jiangxia University [2]College of Electronic Information Science,Fujian Jiangxia University

出　　处：《Chinese Physics Letters》2016年第10期116-119,共4页中国物理快报（英文版）

基　　金：Supported by the Guiding Project of Strategic Emerging Industries of Fujian Provincial Department of Science and Technology under Grant No 2015H0010;the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute of Ceramics of Chinese Academy of Sciences under Grant No SKL201404SIC;the Natural Science Foundation of Fujian Province under Grant No 2016J01751

摘　　要：The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the simulation is Al/ZnO：Al/nZn（O,S）/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/（S＋O） ratio x, the conduction band offset （CBO） at CZTS/Zn（O,S） interface can range from -0.23 eV to 1.06eV if the full range of the ratio is considered. The optimal CBO of 0.23eV can be achieved when the ZnO1-xSx buffer has an S/（S＋O） ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x〉 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x= 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the simulation is Al/ZnO：Al/nZn（O,S）/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/（S＋O） ratio x, the conduction band offset （CBO） at CZTS/Zn（O,S） interface can range from -0.23 eV to 1.06eV if the full range of the ratio is considered. The optimal CBO of 0.23eV can be achieved when the ZnO1-xSx buffer has an S/（S＋O） ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x〉 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x= 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.

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分 类 号：TM914.4[电气工程—电力电子与电力传动]