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机构地区:[1]School of Physics and Nuclear Energy Engineering,Beihang University [2]Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences [3]Integrated Circuit Advanced Process Center,Institute of Microelectronics,Chinese Academy of Sciences [4]Key Laboratory of Micro-nano Measurement-Manipulation and Physics(Ministry of Education),Beihang University
出 处:《Chinese Physics Letters》2016年第10期128-131,共4页中国物理快报(英文版)
基 金:Supported by the National Basic Research Program of China under Grant No 2011CB921804;the Beijing Key Subject Foundation of Condensed Matter Physics under Grant No 0114023
摘 要:The dependence of perpendicular magnetic anisotropy (PMA) on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2 4nm with the increase of MgO thickness from 1-1Onto. The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers. Moreover, the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8 nm, respectively, and both the samples show PMA. These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.The dependence of perpendicular magnetic anisotropy (PMA) on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2 4nm with the increase of MgO thickness from 1-1Onto. The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers. Moreover, the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8 nm, respectively, and both the samples show PMA. These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.
关 键 词:PMA MGO of Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers in nm TA on
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