Band Edge Emission Improvement by Energy Transfer in HybridⅢ-Nitride/Organic Semiconductor Nanostructure  

作　　者：蒋府龙 刘亚莹 李扬扬 陈鹏 刘斌 谢自力 修向前 华雪梅 韩平 施毅 张荣 郑有炓 

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University [2]Nanjing University Institute of Optoelectronics at Yangzhou

出　　处：《Chinese Physics Letters》2016年第10期132-135,共4页中国物理快报（英文版）

基　　金：Supported by the National Key Technology Research and Development Program under Grant No 2016YFB0400100;the National Basic Research Program of China under Grant No 2012CB619304;the High-Technology Research and Development Program of China under Grant Nos 2014AA032605 and 2015AA033305;the National Natural Science Foundation of China under Grant Nos61274003,61422401,51461135002 and 61334009;the Key Technology Research of Jiangsu Province under Grant No BE2015111;the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center;the Research Funds from NJU-Yangzhou Institute of Opto-electronics

摘　　要：GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2- methoxy-5-（2-ethyl）hexoxy-l,4-phenylenevinylene] （MEH-PPV）/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-emciency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescenee （PL） spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2- methoxy-5-（2-ethyl）hexoxy-l,4-phenylenevinylene] （MEH-PPV）/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-emciency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescenee （PL） spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.

关 键 词：GaN PPV MEH Nitride/Organic Semiconductor Nanostructure Band Edge Emission Improvement by Energy Transfer in Hybrid by in 

分 类 号：TN304.2[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]