Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy  

作　　者：Wei Qiu Cui-Li Cheng Ren-Rong Liang Chun-Wang Zhao Zhen-Kun Lei Yu-Cheng Zhao Lu-Lu Ma Jun Xu Hua-Jun Fang Yi-Lan Kang 

机构地区：[1]Tianjin Key Laboratory of Modern Engineering Mechanics,Department of Mechanics, Tianjin University,Tianjin 300072,China [2]Institute of Microelectronics, Tsinghua University,Beijing 100084,China [3]College of Art and Sciences, Shanghai Maritime University,Shanghai 201306,China [4]State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology,Dalian 116024,China [5]Graduate School of the Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Acta Mechanica Sinica》2016年第5期805-812,共8页力学学报（英文版）

基　　金：supported by the National Basic Research Program of China (Grant 2012CB937500);the National Natural Science Foundation of China (Grants 11422219, 11227202, 11372217, 11272232);the Program for New Century Excellent Talents in University (Grant NCET-13);China Scholarship Council (201308120092)

摘　　要：Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.

关 键 词：Residual stress Multi-layer semiconductor heterostructure Micro-Raman spectroscopy（MRS） Strained silicon Germanium silicon 

分 类 号：O342[理学—固体力学] O348[理学—力学]