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作 者:杨双波[1]
机构地区:[1]南京师范大学物理科学与技术学院,江苏省大规摸复杂系统数值模拟省重点实验室
出 处:《南京师大学报(自然科学版)》2016年第3期46-53,共8页Journal of Nanjing Normal University(Natural Science Edition)
摘 要:本文在有效质量近似下,利用变分法计算了Al_xGa_(1-x)As/Ga As/Al_xGa_(1-x)As/Ga As/Al_xGa_(1-x)As非对称耦合双量子阱系统中重/轻空穴激子态的结合能,研究了重/轻空穴激子态的结合能随右阱宽的变化关系;计算了在重/轻空穴激子态下电子与重/轻空穴沿z方向的平均距离及在垂直于z轴的平面内的平均距离,研究了它们随右阱宽的变化关系;计算了给定激子态下电子与重/轻空穴在空间各区域的分布几率,研究了空间各区域分布几率随右阱宽变化的关系.计算中考虑了电子与重/轻空穴在势阱与势垒中具有不同的有效质量,计算结果合理,令人信服.Within effective mass approximation, and by variational method we calculated the binding energies for the heavy hole exciton and light hole exciton for a coupled asymmetric double quantum well system, we studied how the binding energies change with the increase of the width of the right potential well ; at a given exciton state, we calculated the expectation value of the distance in z direction and the distance in the plane perpendicular to z axis between electron and the hole(H/L) ; we studied the behavior of the change of the distances as we increase the width of the right potential well;at a given exciton state, we calculated the probability distribution in space region for the electron and hole (H/L) pair appeared, we studied how the probability changes with increasing the width of the right potential well. The results are reasonable and very convincing.
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