Triplet fusion delayed fluorescence materials for OLEDs  

作　　者：Yan-Ju Luo Zhi-Yun Lu Yan Huang 

机构地区：[1]College of Chemistry,Sichuan University

出　　处：《Chinese Chemical Letters》2016年第8期1223-1230,1466,共8页中国化学快报（英文版）

基　　金：supported by National Natural Science Foundation of China(No.21372168)

摘　　要：The development of fluorescent materials capable of harvesting triplet excitons efficiently is of great importance in achieving high-performance low-cost organic light-emitting diodes（OLEDs）.Among the three mechanisms converting triplet to singlet excitons,triplet fusion delayed fluorescence（TFDF） plays a key role in the demonstration of highly efficient and reliable OLEDs,especially blue devices,for practice applications.This review focuses on the recent development of TFDF materials and their applications in OLEDs.Fundamental TFDF mechanism,molecular design principles,and the structure-property relationship of TFDF materials with a particular emphasis on their different excited state characters,are presented and discussed.Moreover,the future perspectives and ongoing challenges of TFDF materials are also highlighted.The development of fluorescent materials capable of harvesting triplet excitons efficiently is of great importance in achieving high-performance low-cost organic light-emitting diodes（OLEDs）.Among the three mechanisms converting triplet to singlet excitons,triplet fusion delayed fluorescence（TFDF） plays a key role in the demonstration of highly efficient and reliable OLEDs,especially blue devices,for practice applications.This review focuses on the recent development of TFDF materials and their applications in OLEDs.Fundamental TFDF mechanism,molecular design principles,and the structure-property relationship of TFDF materials with a particular emphasis on their different excited state characters,are presented and discussed.Moreover,the future perspectives and ongoing challenges of TFDF materials are also highlighted.

关 键 词：Triplet exciton harvesting Triplet fusion delayed fluorescence Organic light-emitting diode Local excited state Charge transfer 

分 类 号：TN312.8[电子电信—物理电子学]