不同掺杂砷化镓光电阴极光电发射性能分析  

Photoemission Performance Analysis of GaAs Photocathodes with Different Doping Concentrations

作　　者：赵静[1] 覃翠[1] 刘伟伟[1] 余辉龙[1] 瞿文婷[2] 常本康[2] 张益军[2] 

机构地区：[1]南京工程学院通信工程学院,江苏南京211167 [2]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《光学学报》2016年第10期229-235,共7页Acta Optica Sinica

基　　金：国家自然科学基金重点项目(91433108);国家自然科学基金青年科学基金(61301023);江苏省南京工程学院引进人才科研启动基金(YKJ201323;YKJ201419)

摘　　要：采用分子束外延技术制备了具有相同的均匀掺杂或指数掺杂的反射式(r-mode)和透射式(t-mode)GaAs光电阴极样品。利用在线光谱响应测试系统测试了它们的光谱响应,并对实验曲线进行拟合,得到了电子扩散长度和积分灵敏度。结果表明,经工艺处理后的t-mode样品,在均匀掺杂情况下其电子扩散长度的减小量是指数掺杂情况的两倍,积分灵敏度的降低量后者比前者少3%,因此指数掺杂方式有利于降低组件制备工艺对阴极材料发射层的影响。By molecular beam epitaxy technology, reflection-mode （r-mode） and transmission-mode （t-mode） GaAs photocathode samples with identical uniform doping or exponential doping are prepared. Their spectral response are measured based on the on-line spectral response measuring system and via fitting to the experimental curves, the electron diffusion length and integral sensitivity are obtained. These results indicate that, after the cathode module processing of the t-mode sample, the decrease of the electron diffusion length for sample with uniform doping is twice that for sample with exponential doping, the reduction of the integral sensitivity for the latter is smaller by 3% than that for the former. The exponential doping way is beneficial to reducing the influence of cathode module process on photoemission layer of photocathode materials.

关 键 词：光学器件 GAAS光电阴极 掺杂方式 量子效率拟合 电子扩散长度 积分灵敏度 

分 类 号：O462.3[理学—电子物理学]