波状PIN电光调制结构  

Waving PIN Electro-Optic Modulation Structure

作　　者：冯松[1] 薛斌[1] 李连碧[1] 宋立勋[1] 翟学军[1] 朱长军[1] 

机构地区：[1]西安工程大学理学院,陕西西安710048

出　　处：《光学学报》2016年第10期236-243,共8页Acta Optica Sinica

基　　金：国家自然科学基金(61204080);陕西省教育厅科研计划项目(15JK1292);西安工程大学研究生教育"质量工程"项目(15yzl10);陕西省普通高校重点学科建设专项资金建设项目((2008)169)

摘　　要：PIN是电光调制器中常见的一种调制结构,该结构工作时产生的热光效应直接影响着电光调制器的性能。为了缓解这种热光效应对调制器的影响,从PIN调制原理出发,在绝缘体上硅薄膜(SOI)材料的基础上提出了一种波状PIN调制结构,并将该结构与普通PIN调制结构进行对比,定量分析了波状PIN结构对温度、折射率以及调制区载流子浓度的影响,通过仿真得出2V调制电压下,波状PIN结构的温度降低了11.6%,抑制热光效应使得折射率漂移减小了28%,调制区注入载流子浓度提高了26.7%。通过实验,分别制作了波状PIN结构和普通PIN结构的微环电光调制器,经过测试发现波状PIN结构具有更大的谐振峰蓝移值,该结构有效抑制了热光效应的影响,证明了该新型结构的优越性及理论分析的正确性。PIN is a common modulation structure in the electro-optic modulator, and the thermo-optic effect in work directly affects the performance of electro-optic modulator. In order to alleviate the thermo-optic effect, the principle of PIN modulation is firstly researched. A novel structure of waving PIN modulation based on silicon on insulator （SOl） material is invented, and the new structure is compared with ordinary PIN modulation structure. The influence of the waving PIN structure on temperature, refractive index, carrier concentration of modulation area are quantitatively analyzed. At 2 V voltage modulation through simulation, the temperature of waving PIN structure is reduced by 11.6%, the refractive index drift is reduced by 28% through restraining the thermo-optic effect, and injection carrier concentration of modulation area is increased by 26. 7%. Finally, the waving PIN micro-ring electro-optic modulator and ordinary PIN micro-ring electro-optic modulator are respectively fabricated and tested. The test results show that the waving PIN structure has greater shift values of resonance peak and can effectively restrain the thermo-optic effect. The advancement of the novel structure and the correctness of theoretical analysis are verified.

关 键 词：物理光学 光电子器件 电光调制器 波状 热光效应 

分 类 号：TN256[电子电信—物理电子学]