ZrO_2-CuO复合纳米粒子薄膜阻变特性研究  

Resistive switching of ZrO_2-CuO nanoparticle thin films

作　　者：钱昱[1] 邵思佳 李建昌[1] QIAN Yu SHAO Si-jia LI Jian-chang(Vacuum and Fluid Engineering Research Center, School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110819, China)

机构地区：[1]东北大学机械工程与自动化学院真空与流体工程研究中心,辽宁沈阳110819

出　　处：《真空》2016年第5期29-32,共4页Vacuum

摘　　要：利用水热法在180℃下制备ZrO_2-CuO复合纳米粒子(ZrCu),XRD测试表明随CuO含量增加,样品的结晶性变好。在ITO基片上旋涂制膜,通过GaIn微滴技术测试伏安特性,研究了复合比对ZrCu薄膜电学特性的影响。结果发现,ZrCu有良好可重复的双极阻变特性,随CuO含量增加,阈值电压降低,开关比降低。ZrCu低阻态符合欧姆特性,高阻态为空间电荷限制导电机制,阻变机理为氧空位细丝的形成与断裂。第一性原理计算结果与实验观察一致。The ZrO2-CuO nanoparticles were prepared by hydrothermal method under 180℃. The X-ray diffraction analysis shows that the sample crystallinity increases with more content of CuO. The current-voltage curves of spincoated films were measured using Ga In microdroplet technique in order to study effect of Zr：Cu ratio on the film electrical properties. Excellent bipolar resistive switching is observed in the films., and the threshold voltage and ON/OFF ratio drop with the enhanced CuO content. The low resistance state of the samples follows the Ohmic law, while the charge transport of the high resistance state is governed by the trap-free space-charge-limited conduction. The switching mechanism is attributed to the formation and rupture of filamentary paths formed by the migration of oxygen vacancies. The observation of the first-principle calculations agrees well with the experimental results.

关 键 词：水热法 ZrO2-CuO纳米粒子 阻变特性 氧空位细丝 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]