Structural,optical,morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol–gel dip coating process  

作　　者：N.Boukhenoufa R.Mahamdi D.Rechem 

机构地区：[1]Electronic Department,University of Batna [2]Electrical Engineering Department,University of Oum El Bouaghi

出　　处：《Journal of Semiconductors》2016年第11期18-23,共6页半导体学报（英文版）

摘　　要：In this work,sol-gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films.The impact of Al-doped concentration on the structural,optical,surface morphological and electrical properties of the elaborated samples was investigated.It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%,where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm.Moreover,highest transparency has been recorded for the same Al concentration value.The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.In this work,sol-gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films.The impact of Al-doped concentration on the structural,optical,surface morphological and electrical properties of the elaborated samples was investigated.It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%,where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm.Moreover,highest transparency has been recorded for the same Al concentration value.The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

关 键 词：sol-gel dip-coating doped ZnO OPTOELECTRONIC TRANSMITTANCE RMS resistivity 

分 类 号：TN304.055[电子电信—物理电子学]