Dispersion characteristics of nanometer-scaled silicon nitride suspended membrane waveguides  

作　　者：边丹丹 雷勋 陈少武 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2016年第11期60-66,共7页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61435002,61527823 61321063)

摘　　要：We investigate the dispersion properties ofnanometer-scaled silicon nitride suspended membrane wave- guides around the communication wavelength and systematically study their relationship with the key structural parameters of the waveguide. The simulation results show that a suspended membrane waveguide can realize anomalous dispersion with a relatively thinner silicon nitride thickness in the range of 400 to 600 nm, whereas, for the same membrane thickness, a conventional rib or strip silicon nitride waveguide cannot support anomalous dispersion. In particular, a waveguide with 400 nm silicon nitride thickness and deep etch depth （r = 0.05） exhibits anomalous dispersion around the communication wavelength when the waveguide width ranges from 990 to 1255 nm, and the maximum dispersion is 22.56 ps/（nm.km）. This specially designed anomalous dispersion silicon nitride waveguide is highly desirable for micro-resonator based optical frequency combs due to its potential to meet the phase-matching condition required for cascaded four-wave-mixing.We investigate the dispersion properties ofnanometer-scaled silicon nitride suspended membrane wave- guides around the communication wavelength and systematically study their relationship with the key structural parameters of the waveguide. The simulation results show that a suspended membrane waveguide can realize anomalous dispersion with a relatively thinner silicon nitride thickness in the range of 400 to 600 nm, whereas, for the same membrane thickness, a conventional rib or strip silicon nitride waveguide cannot support anomalous dispersion. In particular, a waveguide with 400 nm silicon nitride thickness and deep etch depth （r = 0.05） exhibits anomalous dispersion around the communication wavelength when the waveguide width ranges from 990 to 1255 nm, and the maximum dispersion is 22.56 ps/（nm.km）. This specially designed anomalous dispersion silicon nitride waveguide is highly desirable for micro-resonator based optical frequency combs due to its potential to meet the phase-matching condition required for cascaded four-wave-mixing.

关 键 词：suspended waveguide group velocity dispersion dispersion engineering frequency comb 

分 类 号：TN814[电子电信—信息与通信工程] TB383.1[一般工业技术—材料科学与工程]