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机构地区:[1]大连理工大学建设工程学部,辽宁大连116024
出 处:《材料科学与工程学报》2016年第5期843-847,829,共6页Journal of Materials Science and Engineering
摘 要:随着微电子工业的迅速发展,对层间绝缘材料提出了更高的要求。聚酰亚胺因其良好的热稳定性和较低的介电常数被广泛应用于大规模集成电路的层间绝缘材料。本文主要对低介电常数聚酰亚胺基复合材料的制备方法进行了综述,着重介绍了笼型倍半硅氧烷(POSS)、多孔SiO_2、蒙脱石、多金属氧酸盐(POMs)、石墨烯衍生物的引入在降低聚酰亚胺介电常数方面的应用,并对低介电常数聚酰亚胺的发展前景进行了展望。With the rapid development of microelectronics industry, higher requirements were put forward for inter-level dielectrics. Polyimide has been widely used in inter-level dielectrics in large scale integrated circuit due to their advantages of good thermal stability and low dielectric constant. Preparation of low dielectric constant polyimide matrix composites was reviewed in this paper. Meantime, the effects of polyhedral oligomeric silsequioxane (POSS), porous silica, clay, polyoxometalates (POMs), and graphene derivation the dielectric constant of polyimide were discussed, and the development prospects were also forecasted.
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