Ⅱ-Ⅵ族三元合金薄膜生长与掺杂工艺研究现状  

Research Progresses of the Growth and Doping Process of Ⅱ-Ⅵ Ternary Films

作　　者：任敬川[1] 刘超[1] 崔利杰[1] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《半导体光电》2016年第5期601-609,共9页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61376058)

摘　　要：相对于Ⅱ-Ⅵ族二元化合物,三元合金在调节带隙宽度和晶格常数上的灵活性使其应用前景更加广阔,并有希望解决Ⅱ-Ⅵ族材料普遍存在的单极性掺杂难题而成为未来新型光电器件发展的一个重要方向。文章着重介绍了分子束外延(MBE)技术生长ZnSeTe、CdZnTe、CdSeTe等Ⅱ-Ⅵ族三元合金单晶薄膜的研究现状,分析了MBE生长三元合金时需要考虑的问题,介绍了Ⅱ-Ⅵ族半导体材料n/p型掺杂的常用元素和掺杂方式,讨论了限制Ⅱ-Ⅵ族材料有效掺杂的物理机制和三元合金在掺杂方面的研究动态,并对三元合金薄膜的发展前景进行了展望。Relative to Ⅱ-Ⅵ binary materials, ternary alloys have flexibility in adiusting the band-gap and lattice constant, which make them have more broad application prospect, and have a hope to solve the problems of nuipolar doping commonly existing in Ⅱ-Ⅵ compounds. Thus, it＇s an important direction of the development of new photoelectric devices in the future. In this paper, research progresses on the growth and doping process of Ⅱ-Ⅵ of ternary alloys, ZnSeTe, CdZnTe, CdSeTe, etc. , by molecular beam epitaxy （MBE） are reviewed. Then, the commonly dopants and doping methods for n- or p-type Ⅱ-Ⅵ materials are introduced, and the mechanisms of limiting efficient doping in Ⅱ-Ⅵ compounds are discussed. Besides, the research on the doping of ternary alloys is briefly reviewed. Finally, the problems of Ⅱ-Ⅵ ternary alloys existing in the preparation are summarized and their developing prospects are predicted.

关 键 词：Ⅱ-Ⅵ族半导体 外延生长 掺杂 薄膜 综述 

分 类 号：TN304.2[电子电信—物理电子学]