锆钛比对锆钛酸铅镧反铁电厚膜结构和储能行为的影响  

Structures and Energy-storage Properties of PLZT Anti-ferroelectric Thick Films with Different Zirconium Content

作　　者：张利文[1,2] 宋波[1] 韩菲[3] 

机构地区：[1]北京科技大学,北京100083 [2]内蒙古科技大学,内蒙古包头014010 [3]燕京理工学院,河北廊坊065201

出　　处：《稀有金属材料与工程》2016年第10期2653-2658,共6页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(51462027);'973'计划前期研究专项(2014CB660811)

摘　　要：采用溶胶-凝胶法在LaNiO_3/Si(100)底电极上成功制备了Zr/Ti摩尔比不同的Pb_(0.88)La_(0.08)(Zr)xTi_(1-x))O_3(x=0.30,0.55,0.80)的厚膜,研究了Zr/Ti摩尔比对PLZT反铁电厚膜的结构与储能行为的影响。结果表明:Zr/Ti摩尔比对PLZT反铁电厚膜的结构无太大影响;随着锆钛比中锆含量的增加,储能密度和储能效率呈现逐渐增加的趋势,其中PLZT(8/80/20)厚膜在电场强度为1400kV/cm时储能密度达到最大,为23.8J/cm^3,储能效率高达60.0%。The different different zirconium content in Pb0.88La0.08（ZrxTi1-x）O3（x=0.30,055,0.80）（abbreviated as PLZT） thick films with 1μm thickness were successfully fabricated on LaNiO3/Si（100） by the sol-gel method. The effect of different zirconium content of the PLZT anti-ferroelectric thick films on the dielectric and energy-storage properties were studied scientifically. The results show that the structure of the PLZT anti-ferroelectric thick films was not affected, after zirconium content performance enhanced significantly, when ratio is （8/80/20）, the energy-storage density （W） and energy-storage efficiency （η） were increased, and the maximum W=23.8J/cm^3 and corresponding η=60% were obtained from the PLZT（8/80/20） thick films at 1400 kV/cm.

关 键 词：锆钛酸铅镧 储能行为 介电性能 Zr/Ti摩尔比 

分 类 号：TB383.2[一般工业技术—材料科学与工程]