The effect of the boron-ions implantation on the performance of RADFETs  

作　　者：LIU HongRui WANG ShuaiMin ZHANG JinWen 

机构地区：[1]Institute of Microelectronics, Peking University [2]National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University

出　　处：《Science China(Technological Sciences)》2016年第11期1785-1790,共6页中国科学（技术科学英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2015CB352100)

摘　　要：In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.

关 键 词：DOSIMETERS PMOS RADFETs implant dose post-annealing temperature real time auto-measurement system radiation effects 

分 类 号：TN386[电子电信—物理电子学]