板级DDR3的EMI抑制  

Suppress the EMI of DDR3 on PCB

作　　者：陈德恒 吴均 

机构地区：[1]深圳市一博科技有限公司

出　　处：《安全与电磁兼容》2016年第5期62-64,70,共4页Safety & EMC

摘　　要：某DDR3辐射超标,通过串联电阻、ODT技术等方式改善信号反射从而抑制其EMI。最终的仿真结果表明,在DDR3系统中,串联电阻减小了7%的远场能量,25%的近场能量;ODT技术减小了5%的远场能量,40%的近场能量。The suppression methods for radiated emssion of DDR3 were introduced through using series resistance and ODT technology to reduce the signal reflection. The simulation results showed that the far-field energy could reduce 7% and 5%, and the near-field energy could reduce 25% and 40% by using series resistance and ODT technology correspondingly.

关 键 词：印制电路板 电磁干扰 DDR3 芯片内端接 串联电阻 

分 类 号：TN40[电子电信—微电子学与固体电子学]