硅四端型膜片式压力传感器的优化设计与分析  

Optimal Design for Silicon Diaphragm Pressure Sensor with a Four-Terminal Gauge

作　　者：李乃平[1] 刘三清[1] 应建华[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《华中理工大学学报》1989年第3期63-69,共7页Journal of Huazhong University of Science and Technology

基　　金：国家自然科学基金赞助课题

摘　　要：本文从理论上分析了硅剪切压阻系数的择优取向,以及在矩形、方形和圆形弹性膜片上欲获得较大剪应力,电阻条的布局原则。利用本文提供的方法,对某些膜片上的四端应变电阻所进行的布局分析与Kanda用有限差分法计算出来的布局结果基本一致。文中还提出了膜片上一些新的布局,供设计者选用。A mathematical analysis is made on the shearing piezoresistance coefficients of n- and p-type four-terminal strain resistor (FTSR) on (001), (011) and other crystal planes. Maximum shearing piezoresistance coefficient π'66 is oftained on (001) and (011) crystal plsnes with a p-type FTSR in the (100) direction and en (001) crystal plane with a n-type FTSR in the <110> direction respectively.The relationship between the shearing stress and location and orientation on circular, square or rectangular diaphragms are treated theoretically. It has been found that rather large shearing stress is present at (±α/3, ±b/3) on the rectangular and square diaphragms and in the direction parallel to the periphery, where 2α and 2b are respectively the length and the width of the diaphragm.Optimal designs for circular, square and rectangular diaphragms on (001) and (011) crystal planes with n- and p-type FTSP are given.

关 键 词：硅四端型 膜片式 压力传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]