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机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054
出 处:《微电子学》2016年第5期632-636,共5页Microelectronics
摘 要:基于Widlar基准与Kuijk基准相结合的思想,独创性地提出了一种双环路控制的带隙基准源,加快了负载瞬态响应的速度,将负载瞬态响应时间有效控制在3μs之内。为了减小功耗及简化零极点补偿网络,设计了一种单级高增益运放,并引入一种新的频率补偿方式,保证了基准环路的稳定性。为了克服Widlar基准固有的PSRR较低的缺点,设计了一种电压预调整结构,电源抑制比分别达到-92.5dB@DC,-61dB@1 MHz。Based on Widlar reference structure and Kuijk reference structure,a new bandgap reference structure with dual-loop control was proposed originally,which could speed up the load transient response,and control the load transient response time within 3μs.In order to reduce the power consumption and to simplify the pole-zero compensation network,a single-stage high gain amplifier was designed,and a new frequency compensation method was introduced for ensuring the stability of the reference loop.To overcome the shortage that the Widlar reference inherently had a low PSRR,apre-regulator structure was designed.The proposed circuit achieved high power supply rejection ratios of-92.5dB@DC and-61dB@1 MHz respectively.
分 类 号:TN433[电子电信—微电子学与固体电子学]
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