CMOS衬底调制阈值调整型RF-DC整流器  

A CMOS RF-DC Rectifier with Body Effect and Threshold Adjustment

作　　者：李媛媛[1] 韦保林[1] 韦雪明[1] 徐卫林[1] 段吉海[1] 

机构地区：[1]桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004

出　　处：《微电子学》2016年第5期667-671,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61166004;61264001;61161003);广西自然科学基金资助项目(2014GXNSFAA11-8386;2013GXNSFAA019333;2013GXNSFAA019335)

摘　　要：基于CMOS交叉耦合桥式射频整流器结构,在MOS整流管的栅极与衬底之间引入耦合电容,利用衬底调制效应动态调整MOS整流管的阈值电压,从而提高射频整流器的输出电压,减小稳定时间。对整流器工作原理进行了分析,对电路进行了仿真。结果表明,改进后的CMOS交叉耦合桥式整流器在输入功率为-16dBm@900 MHz时,输出电压为1.48V,输出电压和稳定时间分别比传统电路提高了13mV和22μs。A CMOS-based cross-coupled RF-DC rectifier with a bridge structure was presented.A cross-coupled capacitance was introduced between the gate and body of each MOSFET,so the threshold voltage of the MOSFET was adjusted dynamically by means of body effect to increase the output voltage and to reduce the settling time of the RF-DC rectifier.The working principle was analyzed,and the circuit was simulated.Simulation results showed that the output voltage of the proposed CMOS-based cross-coupled rectifier was 1.48 Vwith an input power [e-mail] with conventional circuits,the output voltage and settling time were increased by 13 mV and22μs respectively.

关 键 词：射频能量收集整流器 CMOS交叉耦合桥式整流器 衬底调制效应 

分 类 号：TN35[电子电信—物理电子学]