组份渐变电子阻挡层对InGaN/GaN LED光电特性的影响  

Influences of Composition-Graded Electron Blocking Layer on Electrical and Optical Performances of InGaN/GaN LEDs

作　　者：管婕 翟阳[1] 闫大为[1] 罗俊[2] 肖少庆[1] 顾晓峰[1] 

机构地区：[1]江南大学电子工程系物联网技术应用教育部工程研究中心,江苏无锡214122 [2]西安电子科技大学微电子学院宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《微电子学》2016年第5期711-715,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61504050);江苏省普通高校研究生科研创新计划项目(批KYLX15_1195);中央高校基本科研业务费专项资金资助项目(JUSRP51510;JUSRP51323B);江苏省六大人才高峰资助项目(DZXX-053)

摘　　要：利用数值模拟方法,研究组份渐变电子阻挡层(EBL)对InGaN/GaN发光二极管电学和光学特性的影响。结果表明,三角形组份渐变EBL结构能有效减小器件的开启电压,提高光输出功率,改善高注入电流水平下发光效率的下降情况。能带模拟结果进一步表明,三角形组份渐变EBL结构显著提高了导带底的电子势垒,可有效限制电子向P型GaN层的泄露,同时减小了价带顶的空穴势垒,可增强P型GaN层的空穴向有源区的注入效率,改善其在量子阱内的浓度分布。The influences of the composition-graded electron blocking layer（EBL）on electrical and optical performances of InGaN/GaN LEDs were investigated by numerical simulation.The results showed that the triangular-profile EBL structure could significantly reduce the forward turn-on voltage,increase the light output power,and improve the efficiency droop behavior at high current injection.Energy band simulation results further revealed that the triangular-profile EBL could not only increase the effective electron potential barrier at the bottom of conduction band,decreasing the electron leakage into the p-type GaN layer,but also reduce the effective hole potential barrier at the top of valence band,enhancing the hole injection into the active layer and improving the distribution of holes in quantum wells.

关 键 词：InGaN/GaN发光二极管 组份渐变电子阻挡层 空穴注入效率 

分 类 号：TN312.8[电子电信—物理电子学]