Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method  

作　　者：耿苗 李培咸 罗卫军 孙朋朋 张蓉 马晓华 

机构地区：[1]School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China [2]Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

出　　处：《Chinese Physics B》2016年第11期446-452,共7页中国物理B（英文版）

摘　　要：A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.

关 键 词：switch intrinsic transistor verified drain embedding breakdown extrinsic modeled symmetric 

分 类 号：TN386[电子电信—物理电子学]