Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode  

作　　者：朱阁 郑福 王超 孙志斌 翟光杰 赵清 

机构地区：[1]School of Physics, Beijing Institute of Technology, Beijing 100081, China [2]University of Chinese Academy of Sciences, Beijing 100049, China [3]Key Laboratory of Electronics and Information Technology for Space Systems, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China

出　　处：《Chinese Physics B》2016年第11期662-667,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11275024,61274024,and 61474123);the Youth Innovation Promotion Association,China(Grant No.2013105);the Ministry of Science and Technology of China(Grant Nos.2013YQ030595-3 and 2011AA120101)

摘　　要：We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage（V（ex）） when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diode was cooled to-30 degrees Celsius.When the V（ex） is too low（0.2 V-0.8 V） or too high（3 V-4.2 V）,the timing jitter is increased with the V（ex）,particularly at high V（ex）.While at middle V（ex）（1 V-2.8 V）,the timing jitter is reduced.Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V（ex） and the width of the gate-on time.For the 1-GHz sinusoidally gated detector,the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4%and a dark count rate of -2.08×10 -5 per gate at the V（ex） of 2.8 V.To evaluate the whole performance of the detector,we calculated the noise equivalent power（NEP） and the afterpulse probability（P（ap））.It is found that both NEP and P（ap） increase quickly when the V（ex） is above 2.8 V.At -2.8-V V（ex）,the NEP and P（ap） are -2.06×10-（16）W/Hz-（1/2） and 7.11%,respectively.Therefore,the detector should be operated with V（ex） of 2.8 V to exploit the fast time response,low NEP and low P（ap）.We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage（V（ex）） when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diode was cooled to-30 degrees Celsius.When the V（ex） is too low（0.2 V-0.8 V） or too high（3 V-4.2 V）,the timing jitter is increased with the V（ex）,particularly at high V（ex）.While at middle V（ex）（1 V-2.8 V）,the timing jitter is reduced.Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V（ex） and the width of the gate-on time.For the 1-GHz sinusoidally gated detector,the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4%and a dark count rate of -2.08×10 -5 per gate at the V（ex） of 2.8 V.To evaluate the whole performance of the detector,we calculated the noise equivalent power（NEP） and the afterpulse probability（P（ap））.It is found that both NEP and P（ap） increase quickly when the V（ex） is above 2.8 V.At -2.8-V V（ex）,the NEP and P（ap） are -2.06×10-（16）W/Hz-（1/2） and 7.11%,respectively.Therefore,the detector should be operated with V（ex） of 2.8 V to exploit the fast time response,low NEP and low P（ap）.

关 键 词：jitter gated timing photodiode operated quickly likely gating photon cooled 

分 类 号：TN312.7[电子电信—物理电子学]