High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer  

作　　者：林家勇 裴艳丽 卓毅 陈梓敏 胡锐钦 蔡广烁 王钢 

机构地区：[1]State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology,Sun Yat-Sen University [2]School of Materials Science and Engineering, Sun Yat-Sen University

出　　处：《Chinese Physics B》2016年第11期668-671,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61204091,61404177,51402366,and U1201254);the Science and Technology Planning Project of Guangdong Province,China(Grant No.2015B010132006)

摘　　要：In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes（LEDs） with Aldoped ZnO（AZO） transparent conductive layers（TCLs） has been demonstrated.The AZO-TCLs were fabricated on the n-＋-InGaN contact layer by metal organic chemical vapor deposition（MOCVD） using H2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency（98%）,low resistivity（510 -4 Ω·cm）,and an epitaxial-like excellent interface on p-GaN with an n＋-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL（LED-Ⅲ）,and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer（LED-Ⅱ）,respectively.The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes（LEDs） with Aldoped ZnO（AZO） transparent conductive layers（TCLs） has been demonstrated.The AZO-TCLs were fabricated on the n-＋-InGaN contact layer by metal organic chemical vapor deposition（MOCVD） using H2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency（98%）,low resistivity（510 -4 Ω·cm）,and an epitaxial-like excellent interface on p-GaN with an n＋-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL（LED-Ⅲ）,and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer（LED-Ⅱ）,respectively.The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.

关 键 词：MOCVD conductive epitaxial transparent indium resistivity annealing transparency attributed sapphire 

分 类 号：TN312.8[电子电信—物理电子学]