钛酸锶铅陶瓷电阻开关效应研究  

The Resistance Switching Effect in(Sr_(0.9)Pb_(0.1))TiO_3 Ceramic

作　　者：岳经龙 唐新桂[1] 

机构地区：[1]广东工业大学物理与光电工程学院,广东广州510006

出　　处：《广东工业大学学报》2016年第6期34-37,48,共5页Journal of Guangdong University of Technology

基　　金：国家自然科学基金资助项目(11574057);广东省科技计划项目(2013B090500035)

摘　　要：陶瓷样品的电阻开关特性报道较少见,本文采用传统的高温固相法制备出钛酸锶铅((Sr0.9Pb0.1)Ti O3)陶瓷,并对陶瓷样品的相结构、电性能、阻抗进行了测试表征.XRD图谱显示样品呈现纯的钙钛矿四方相晶体结构.循环回路测试其I-V特性,当施加电压±60 V,陶瓷样品显示出良好的电阻开关效应.考虑到材料在制备过程中Pb挥发产生的氧空位,通过分析阻抗图谱,利用Arrhenius公式拟合计算出样品的活化能,进一步确定引起器件电阻开关特性的可能是氧空位机制.（Sr0.9Pb0.1）TiO3 ceramics were prepared by the traditional high temperature solid-state reac-tion method.The structural, electrical properties and impedance of ceramics were investigated .XRD re-sults show that the ceramics show typical tetragonal perovskite structure .The resistance states can be switched by applying voltage pulses ±60 V.The phenomenon may be attributed to oxygen vacancies caused by Pb volatilization in the preparation of materials , which can be further confirmed by the imped-ance spectrum analysis of samples .Oxygen vacancy mechanism is the cause of the changes in the electri-cal properties by using the Arrhenius formula to calculate the activation energy .These resistance switc-hing behaviors indicate that ceramics can even exhibit resistance switching performance as well as thin film devices or single crystal devices and provide the possibility of new switching devices with the memory effect composed of ceramics .

关 键 词：(Sr0.9Pb0.1)TiO3 氧空位 陶瓷电阻开关效应 高速非易失性存储器件 

分 类 号：TM23[一般工业技术—材料科学与工程]