不同因素对IGBT温敏参数dV/dt的影响  

Study on Effects of Different Factors on IGBT Thermal Sensitive Electrical Parameter dV/dt

作　　者：袁逸超 向大为[1] 

机构地区：[1]同济大学电气工程系,上海201804

出　　处：《电源学报》2016年第6期35-39,66,共6页Journal of Power Supply

基　　金：中央高校基本科研业务费专项资金资助项目(0800219334)~~

摘　　要：结温是IGBT器件的重要状态变量,可在变流器运行过程中通过监测温敏电参数d V/dt获得相关信息。然而实际系统中除温度与电流外,其他因素也可能改变温敏参数d V/dt,从而影响IGBT结温测量的准确性。首先主要研究了不同因素(包括直流电压,门极电阻,杂散电感以及突波吸收电容)对温敏参数d V/dt的影响,并对不同因素与d V/dt的关系进行了理论分析;然后利用双脉冲实验研究了不同因素对1 700 V/450 A的IGBT模块温敏参数d V/dt的影响,并进一步评估其对结温测量的影响。该研究工作对基于d V/dt的IGBT结温测量技术的研发具有一定的参考价值。Junction temperature is an important condition variable for IGBT, which can be measured by monitoring the thermo-sensitive electrical parameter dV/dt. However,it is difficult to measure IGBT junction temperature accurately in a real system. In this paper,the effects of different factors,such as the DC voltage,gate resistor,stray inductance and snubber capacitor,on the IGBT thermal sensitive parameter dV/dt is studied. The effects is firstly analyzed theoretically and investigated by a series of double-pulse tests experimentally. It is hoped that the research results will provide some reference for the R＆D of dV/dt based IGBT junction temperature measurement technique.

关 键 词：IGBT d V/dt 结温测量 杂散电感 

分 类 号：TM46[电气工程—电器]