无损伤单晶圆兆声波清洗装置的研发  

Development of Damage-Free Single Wafer Megasonic Cleaning Device

作　　者：滕宇[1] 陈洁[1] 冯晓敏[1] 刘伟[1] 刘效岩[1] 吴仪[1] 

机构地区：[1]北京七星华创电子股份有限公司,北京101312

出　　处：《半导体技术》2016年第11期857-863,共7页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2013ZX02103)

摘　　要：在半导体制造中,随着集成电路特征尺寸的不断缩小,晶圆表面纳米颗粒污染物的无损伤清洗变得越来越具有挑战。介绍了一种自主研发的单晶圆兆声波清洗装置,利用石英微共振腔阵列对到达晶圆表面的兆声波能量进行控制。研究了不同工艺条件下该装置清洗后的颗粒去除效率,并与常规喷嘴的清洗结果进行比较。在图形损伤方面,采用该装置对具有40 nm线宽的多晶硅线条状栅极结构的图形晶圆进行了损伤测试,并与商业化的兆声波清洗装置的清洗结果进行对比。结果表明,该自主研发的装置能够在保证对晶圆表面图形结构没有损伤的前提下,有效地去除颗粒污染物,在40 nm及以下的半导体清洗工艺中应用前景广阔。With the continuous reduction of the feature size of integrated circuits,damage-free removal of nano-particle contaminations on the wafer surface is becoming a major challenge in semiconductor manufacturing. A self-designed single wafer megasonic cleaning device was introduced, in which quartz micro-resonate cavity arrays were used to control the megasonic energy arrived on the wafer surface. The particle removal efficiency of the device with different cleaning conditions were studied,and compared with the cleaning results of the conventional nozzle. For the pattern damage,the device was used to carry out the damage test of the poly-gate-stack line pattern wafer with to 40 nm line width. And the cleaning results were compared with the results of the commercial megasonic cleaning device. The results show that the self-designed megasonic cleaning device can realize high particle removal efficiency without damaging the tiny pattern structures on the wafer surface,showing wide application prospects of the megasonic cleaning device in 40 nm and sub-40 nm semiconductor cleaning process.

关 键 词：颗粒去除效率 兆声波清洗 无损伤 图形晶圆 纳米颗粒污染物 

分 类 号：TN305.97[电子电信—物理电子学]