氧钝化硅基ZnO/纳米多孔硅柱状阵列异质结近白光LED的性能  

Performance of Oxygen Passivation Silicon-Based ZnO/Nanoporous Si Pillar Array Heterojunction Near White Light LED

作　　者：刘春玲[1] 窦宇[1] 陈琛[1] 王春武[1] 姜文龙[1] Liu Chunling Dou Yu Chen Chen Wang Chunwu Jiang Wenlong(College of Information and Technology, Jinlin Normal University, Siping, Jilin 136000, China)

机构地区：[1]吉林师范大学信息技术学院,吉林四平136000

出　　处：《激光与光电子学进展》2016年第11期274-279,共6页Laser & Optoelectronics Progress

基　　金：吉林省教育厅项目(吉教科合字[2014]第491号);吉林省科技厅项目(20160520019JH)

摘　　要：设计并制备了结构为掺锡氧化铟(ITO)/氧化锌(ZnO)/纳米多孔硅柱状阵列(NSPA)/Si/Al的纳米异质结发光二极管(LED),实现了近白光电致发光(EL)。利用蒸气刻蚀技术,在P-Si表面制备NSPA层。对NSPA表面进行氧等离子体钝化处理,通过优化钝化参数改善了硅基NSPA的发光特性。在NSPA表面生长N型ZnO薄膜,得到ZnO/NSPA纳米异质结LED。实验结果表明,氧等离子体钝化处理能够有效地提高该器件的发光强度,并实现近白光发射。The nano heterojunction light emitting diode （LED） with structure of indium oxide （ITO）/ZnO/nanoporous Si pillar array（NSPA）/Si/Al is designed and fabricated, and the near white light electroluminescence （EL） is realized. Firstly, the NSPA layer is prepared on the surface of P-Si by using the vapor etching technique. Then, the surface of the NSPA is passivated by oxygen plasma and the luminescent properties of NSPA silicon substrate are improved by optimizing the passivation parameters. Finally, N type ZnO thin film is grown on the NSPA surface, and ZnO/NSPA nano heterojunction light emitting diodes are developed. The experimental results show that the oxygen plasma passivation treatment can effectively improve the light intensity of the device and realize an emission of near white light.

关 键 词：光学器件 发光二极管 半导体材料 等离子体 

分 类 号：TN383[电子电信—物理电子学]