n-ZnO/p-AlGaN LED结构DFB激光器的设计与分析  

Design and Analysis of the DFB Laser Based on n-ZnO/p-AlGaN LED

作　　者：王斐[1] 胡芳仁[1] 陈凯文[1] 潘凌楠 WANG Fei HU Fang-ren CHEN Kai-wen PAN Ling-nan(School of Optoelectronic Engineering, Nanjing University of Posts ＆ Telecommunications, Nanjing 210046,China)

机构地区：[1]南京邮电大学光电工程学院,南京210046

出　　处：《光通信研究》2016年第3期53-55,61,共4页Study on Optical Communications

基　　金：国家自然科学基金资助项目(61274121;61574080)

摘　　要：根据严格耦合波理论和介质平板波导理论,利用Comsol Multiphysic软件仿真设计了基于单晶n-ZnO/p-AlGaN LED(发光二极管)结构的DFB(分布反馈)半导体激光器的光栅结构。针对LED结构加电压后发射近紫外光,分析了二维电场模式分布图,得出单纵模传输随着光栅不同参量的变化情况。分析表明,在4 V正向偏置电压下,当占空比为50%、光栅周期为109.2 nm、光栅高度为69.8 nm时,光谱线宽窄、单模选择性好,电场模达5.877 4×107V/m。为电泵浦DFB半导体激光器的设计与加工提供了一定的基础。According to the rigorous coupled-wave theory and medium slab waveguide theory, the structure of Distributed Feed Back （DFB） semiconductor laser based on single-crystal n-ZnO/p-A1GaN Light Emitting Diode （LED） structure is simulated and designed by the Comsol Multiphysic software. The distribution of a two-dimensional electric mode is analyzed with near-ultraviolet light emission at the applied voltage of 4 V on the n-ZnO/p-AlGaN LED structure. The variation of the single longitudinal mode with different parameters of the grating is obtained. Also, the simulation results show that the electric field mode reached 5. 877 4 × 107 V/m with narrow spectral linewidth and preferable mode selectivity under the condition of the duty ratio of 50%, grating period of 109.2 nm and the grating height of 69.8 nm. The results in the paper provide a foundation for the design and processing of electrically pumped DFB semiconductor laser.

关 键 词：发光二极管结构 分布反馈半导体激光器 氧化锌 电泵浦 

分 类 号：TN248[电子电信—物理电子学]