Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices  

作　　者：何宝平 王祖军 盛江坤 黄绍艳 

机构地区：[1]The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology

出　　处：《Journal of Semiconductors》2016年第12期45-50,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.11305126)

摘　　要：In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad （Si）/s. The investigation＇s results show that the radiation-induced charge buildup in the gate oxide can be ignored, and the field oxide isolation struc- ture is the main total dose problem. The total ionizing dose （TID） radiation effects of field oxide parasitic transistors are studied in detail. An analytical model of radiation defect charge induced by TID damage in field oxide is estab- lished. The I-V characteristics of the NMOS parasitic transistors at different doses are modeled by using a surface potential method. The modeling method is verified by the experimental I V characteristics of 180 nm commer- cial NMOS device induced by TID radiation at different doses. The model results are in good agreement with the radiation experimental results, which shows the analytical model can accurately predict the radiation response characteristics of advanced bulk CMOS technology device.In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad （Si）/s. The investigation＇s results show that the radiation-induced charge buildup in the gate oxide can be ignored, and the field oxide isolation struc- ture is the main total dose problem. The total ionizing dose （TID） radiation effects of field oxide parasitic transistors are studied in detail. An analytical model of radiation defect charge induced by TID damage in field oxide is estab- lished. The I-V characteristics of the NMOS parasitic transistors at different doses are modeled by using a surface potential method. The modeling method is verified by the experimental I V characteristics of 180 nm commer- cial NMOS device induced by TID radiation at different doses. The model results are in good agreement with the radiation experimental results, which shows the analytical model can accurately predict the radiation response characteristics of advanced bulk CMOS technology device.

关 键 词：total ionizing dose （TID） bulk CMOS shallow trench isolation （STI） oxide trapped charge interfacetraps 

分 类 号：TN386[电子电信—物理电子学]