Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_(0.82)Ga_(0.18)As buffer layer  

作　　者：魏秋林 郭作兴 赵磊 赵亮 袁德增 缪国庆 夏茂盛 

机构地区：[1]Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University [2]State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

出　　处：《Optoelectronics Letters》2016年第6期441-445,共5页光电子快报（英文版）

基　　金：supported by the National Key Basic Research Program of China(No.2012CB619200);the National Natural Science Foundation of China(No.61474053);the State Key Laboratory for Mechanical Behavior of Materials of Xi'an Jiaotong University(No.20161806);the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials,Ministry of Education,Jilin University(No.1018320144001)

摘　　要：Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.

关 键 词：indium epitaxial dislocation verified optimize MOCVD HRTEM mismatch scatter arrangement 

分 类 号：TN304[电子电信—物理电子学]