Optimizing ef?ciency of polycrystalline p-Si anode organic light-emitting diode  

作　　者：Jian-Xing Luo Wei Wang Hu Meng Wan-Jin Xu Guo-Gang Qin 

机构地区：[1]State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China [2]Key Laboratory of Semiconductor Materials, Chinese Academyof Science, Beijing 100083, China

出　　处：《Rare Metals》2016年第11期826-830,共5页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (Nos. 50732001, 10674012, 10874001, and 60877022);the National Basic Research Program of China (No. 2007CB613402)

摘　　要：Optimizing efficiency of organic light-emitting diodes（OLEDs） with a structure of Al/glass/nanometerthick polycrystalline p-Si（NPPS） anode/SiO_2/N＇-bis-（1-naphthl）-diphenyl-1,1＇-biphenyl-4,4＇-diamine（NPB）/tris（8-hydroxyquinoline） aluminum（Alq_3）/4,7-diphenyl^（-1）,10-phenanthroline（BPhen）：Cs_2CO_3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering（MS）Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent efficiency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power efficiency of the NPPS anode OLED reach maximum values of 6.7 cd ·A^（-1）and 4.64 lm ·W^（-1）, respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide（ITO） anode counterpart, and then, the physical reasons were discussed.Optimizing efficiency of organic light-emitting diodes（OLEDs） with a structure of Al/glass/nanometerthick polycrystalline p-Si（NPPS） anode/SiO_2/N＇-bis-（1-naphthl）-diphenyl-1,1＇-biphenyl-4,4＇-diamine（NPB）/tris（8-hydroxyquinoline） aluminum（Alq_3）/4,7-diphenyl^（-1）,10-phenanthroline（BPhen）：Cs_2CO_3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering（MS）Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent efficiency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power efficiency of the NPPS anode OLED reach maximum values of 6.7 cd ·A^（-1）and 4.64 lm ·W^（-1）, respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide（ITO） anode counterpart, and then, the physical reasons were discussed.

关 键 词：Organic light-emitting diode Polycrystallinep-Si Magnetron sputtering ELECTROLUMINESCENCE 

分 类 号：TN383.1[电子电信—物理电子学]