速调管中二次电子引起的杂谱和高频包络塌肩研究  

Suppression of Parasitic Output and Recovery of RF Output Envelope Distortion of Klystron by Secondary Electron Technologies

作　　者：曹静[1] 丁耀根[1] 张兆传[1] 孙小欣[1] 丁海兵[1] 沈斌[1] 

机构地区：[1]中国科学院电子学研究所中国科学院高功率微波源与技术重点实验室,北京100190

出　　处：《真空科学与技术学报》2016年第11期1260-1265,共6页Chinese Journal of Vacuum Science and Technology

摘　　要：描述了一个宽带多注速调管研制过程中出现的杂谱和高频包络塌肩现象,分析这些现象是由谐振腔二次电子谐振和二次电子内反馈引起的,本文根据消除二次电子谐振的方法提出了消除或抑制杂谱和高频包络塌肩的方法。文章中提出的方法已经被应用在速调管设计中,并经热测试验验证行之有效。Here,we theoretically and experimentally addressed the two major problems： the parasitic output and tilt of the RF output envelope shoulderof a broadband multi- beam klystron（ MBK）. The analytical results show that the resonance and internal feedbackof the secondary electrons all have a major impact on the parasitic output and RF output envelope distortion. Possible solutions were proposed to significantly eliminate the RF distortion and parasitic output,including but not limited to reducing the gain by design optimization of MBK bunching cavity,roughening the drift- gap surfaces with small grooves to randomly scatter the secondary electrons,and heightening the uniform magnetic field intensity. The hot- test results of the modified MBK show that the proposed solutions are capable of effectively suppressing the parasitic output and recovering the RF output envelope distortion. We suggest that the proposed solutions be of some technological interest in klystron design.

关 键 词：速调管 二次电子 高频包络 杂谱 

分 类 号：TN122[电子电信—物理电子学]