PECVD变结构腔室热流场耦合规律研究  

Simulation and Measurement of Thermal Flow Fieldin Plasma Enhanced Chemical Vapor Deposition Reactor

作　　者：黄尊地[1] 常宁[1] 杨铁牛[2] 周玉林[2] 

机构地区：[1]五邑大学轨道交通学院,江门529020 [2]五邑大学机电工程学院,江门529020

出　　处：《真空科学与技术学报》2016年第11期1325-1333,共9页Chinese Journal of Vacuum Science and Technology

基　　金：国家科技重大专项资助项目(2011ZX02403-004)

摘　　要：在真空半导体产业中,等离子体增强化学气相沉积腔室内热流场耦合的参数控制是生产工艺过程决定产品质量的关键因素。通过变结构腔室内温度和压力耦合测量试验验证,得到正确可行的针对变结构腔室三维模型热流场耦合计算的仿真算法。对比试验结果,依次改变腔室入口流量、出口压力以及承载台温度的大小,分析计算腔室内温度和压力的耦合分布特性。变结构腔室中热流场耦合分布规律,为真空腔室结构设计及参数控制提供理论依据。The distributions of the thermal flow field,in the industrial plasma enhanced chemical vapor deposition reactors,were mathematically modeled,theoretically analyzed,numerically simulated and experimentally measured. The impact of the substrate temperature,gas flow-rate and outlet pressure on the profiles of the temperature /pressure was investigated. The preliminary results show that the substrate temperature,gas flow-rate and outlet＇s pressure strongly affect the temperature / pressure distributions. For example,the high substrate temperature distributes in a slowly decreasing radial profile but in a rapidly decreasing axial profile,dropping to 27℃ at 8. 5 cm above the substrate; as the gas flow-rate increased,the temperatures,at 2 cm above the substrate,above / below the 2nd showerhead,slowly decreased. In contrast,as the outlet pressure increased,the temperature,2 cm above the substrate,decreased; accompanied by the increasing temperatures around the 2ndshowerhead. The simulated and measured results were in good agreement.

关 键 词：真空半导体 热流场耦合 参数控制 变结构腔室 

分 类 号：TB71[一般工业技术—真空技术]