柔性衬底上制备氟、镓共掺杂氧化锌透明导电薄膜及其光电性质研究  

Synthesis and Properties of F/Ga Co-Doped ZnO Thin Films on Flexible Substrate

作　　者：赵越[1] 杜小琴[1] 晏中 潘阳[1] 吴晓京[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2016年第11期1334-1341,共8页Chinese Journal of Vacuum Science and Technology

摘　　要：采用脉冲激光沉积技术在聚对苯二甲酸乙二醇酯(PET)衬底上制备了Ga、F共掺杂的Zn O透明导电薄膜。采用X射线衍射仪、紫外-可见分光光度计、原子力显微镜和霍尔测试仪等手段对薄膜性能进行了表征。制备过程中通过控制沉积时间、Ga掺杂量、衬底温度和氧气流量等实验条件,比对研究了各参数对薄膜性能的影响。为了分析各参数对实验结果影响的重要性,采用正交实验法设计实验,并对结果进行正交分析、极差方差分析。得出了各个实验条件对结果影响的大小顺序和最优的制备条件。结果表明,掺杂量和沉积时间对于薄膜的光电性能影响较大,Ga掺杂量取1.0%(原子比),且沉积时间较短的薄膜透光率较好;Ga掺杂量取1.0%,且沉积时间较长的薄膜导电性能较好。The Ga and F co-doped ZnO thin films（ GFZO） were synthesized by pulsed laser depositionon flexible substrate of polyethylene terephthalate（ PET）. The effect of the synthesis conditions,including but not limited to the laser power,substrate temperature,O_2flow-rate,deposition time and contents of Ga and F,on the microstructures and optical/electrical properties of the GFZO films were investigated with X-ray diffraction,atomic force microscopy,ultra violet visible spectroscopy and Hall effect measurement. The growth conditions were optimized in orthogonal experimental design method. The results show that the GFZO films＇ properties strongly depend on the Gacontent and deposition time but weakly on the substrate temperature and O_2 flow-rate. To be specific,synthesized at100℃ and a Ga-content of 1. 0%（ at.） for 60 min,the GFZO coating has highest transmittance of 86. 48% and a resistivity of 4. 82 × 10^-3Ω·cm.

关 键 词：透明导电薄膜 Ga、F共掺杂ZnO PET柔性衬底 正交实验设计 

分 类 号：O484.1[理学—固体物理]