Ga N-on-Si laser diode: open up a new era of Si-based optical interconnections  

作　　者：Dabing Li 

机构地区：[1]State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics, Fine Mechanics and Physics,Chinese Academy of Sciences

出　　处：《Science Bulletin》2016年第22期1723-1725,共3页科学通报（英文版）

基　　金：funding by the National Key Research and Development Program of China (2016YFB0400101)

摘　　要：As Si-based electronics technology approaches its scaling limits,it arises great interest in optical interconnections via Si photonics.However,Si with an indirect band-gap structure can hardly emit light.The lack of an efficient onchip laser source remains as the major roadblock of Si photonics for decades,which recently has drawn renewed research interest.It is highly desirable to grow III–V semiconductor laser directly on Si for a monolithic integration with Si photonics to take the full advantage of lowcost large-scale fabrication platforms[1–3].As Si-based electronics technology approaches its scaling limits, it arises great interest in optical interconnections via Si photonics. However, Si with an indirect band-gap structure can hardly emit light.

关 键 词：Si Ga N-on-Si laser diode 

分 类 号：TN31[电子电信—物理电子学]