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机构地区:[1]安徽大学物理与材料科学学院,安徽合肥230601
出 处:《安徽大学学报(自然科学版)》2016年第6期37-45,共9页Journal of Anhui University(Natural Science Edition)
基 金:Supported by the National Science Foundation of China(11174001,51402002)
摘 要:在VO_2-草酸体系中,利用一步水热合成法制备结晶良好的VO_2(A)纳米杆.成品的结构和尺寸分别通过X射线衍射(XRD)、扫描电镜(SEM)和透射电子显微镜(TEM)表征.差示扫描量热(DSC)曲线显示在加热过程中VO_2的相转变温度为167.8℃.变温X射线衍射(XRD)图谱显示加热时VO_2(A)在160~180℃发生相变.温度升高到450K时,磁化率突然增加.使用4探针法测量VO_2(A)样品的电阻率,滞后现象显示VO_2(A)的相变为1级相变.根据阿仑尼乌斯曲线,得出低温VO_2(AL)和高温VO_2(AH)的活化能分别为0.39eV和0.37eV.变温红外光谱显示VO_2(A)纳米杆在红外区域具有良好的光学转换特性,此特性与VO_2(A)的可逆结构转变有关.研究结果表明VO_2(A)纳米材料可应用于红外开关装置.Well-crystallized VO2(A) nanorods were facilely prepared by one-step hydrothermal approach in V2 O5-H2 C2 O4-H20 system. Structure and size of as-obtained products were examined by X-ray diffraction (XRD), scanning and transmission electron microscopies (TEM). DSC curves showed the phase transition of VO2 (A) nanorods was 167. 8 ℃ upon heating. Varying-temperature XRD patterns showed that the structural transition of the VO2(A) product occurred between 160 ℃ and 180 ℃ on the heating. The magnetic susceptibility exhibited a sudden increase at about 450 K with increasing temperature. The resistance of the VO2 (A) sample was measured by four probe method, the hysteresis showed that the electronic phase transition of VO2(A) was strongly first order in nature. The hopping activation energy was calculated based on Arrhenius plot, which was 0. 39 eV for the low-temperature VO2(AL), and 0.37 eV for the high-temperature VO2(AH) respectively. Variable-temperature infrared spectra revealed that the VO2 (A) nanorods had good optical switching character in the infrared light region, which was concerned with the reversible structure transition of the VO2 (A). The research results indicated the VO2 (A) nanostructures could be applied in the infrared light switching device.
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