CMOS反相器低频噪声模型及可靠性表征研究  

Investigation on Low-Frequency Noise Models and Representation for Reliability of CMOS Inverter

作　　者：陈晓娟[1] 陈东阳[2] 吴洁[3] 

机构地区：[1]长春理工大学电子信息工程学院,吉林长春130022 [2]东北电力大学信息工程学院,吉林吉林132012 [3]北华大学电气信息工程学院,吉林吉林132013

出　　处：《电子学报》2016年第11期2646-2652,共7页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61271115)

摘　　要：为了表征CMOS反相器的可靠性,从其负载电流和输出电压的特性入手,详细推导了一种基于载流子波动理论的低频噪声模型,并由实验数据验证了模型的准确性.由实验结果可知,负载电流功率谱密度随频率的增加而减小,遵循1/f噪声的变化规律;得到了负载电流归一化噪声功率谱密度与器件尺寸的关系.通过深入研究1/f噪声与界面态陷阱密度的关系,验证了1/f噪声可用于表征CMOS反相器的可靠性,证明了噪声幅值越大,器件可靠性越差,失效率显著增大,为评价CMOS反相器的靠性提供了一种可行及有效的方法.In order to characterize the reliability of CMOS inverter, a kind of low-frequency noise model is deduced in detail by using the characteristics of load current and output voltage, based on the carder fluctuation theory, and the accuracy of the model was verified by experimental data. The experiment results indicate that load current power spectral follows the changing rule of the 1/f noise, decreasing with the increase of frequency;the normalized noise power spectral density of load J current decreases with the increase of the channel width or length. Using the experimental data, the relationship between 1/f noise and interface trap state densityof CMOS inverter is established. Verify that the 1If noise can be used to characterize the reliability of CMOS inverter. It is proved that the larger interface trap state density, the larger the noise magnitude; leading to the degradation of device reliability and significant rise in device invalidation rate. That provides a feasible and effective method for evaluating the reliability of CMOS inverter.

关 键 词：COMS反相器 低频噪声 可靠性 缺陷 

分 类 号：TN94[电子电信—信号与信息处理]