Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments  

作　　者：马寒露 王中强 徐海阳 张磊 赵晓宁 韩曼舒 马剑钢 刘益春 

机构地区：[1]Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet (UV) Light-Emitting Materials and Technology of Ministry of Education,Northeast Normal University

出　　处：《Chinese Physics B》2016年第12期418-423,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China for Excellent Young Scholars(Grant No.51422201);the National Natural Science Foundation of China(Grant Nos.51172041,51372035,11304035,61574031,and 61404026);the National Basic Research Program of China(Grant No.2012CB933703);the"111"Project,China(Grant No.B13013);the Fund from Jilin Province,China(Grant Nos.20140520106JH and 20140201008GX);the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20130043110004);the Fundamental Research Funds for the Central Universities,China(Grant Nos.2412015KJ008 and 2412016KJ003)

摘　　要：In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.

关 键 词：resistive switching UNIPOLAR BIPOLAR oxygen vacancy METAL conductive filament 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]