Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate  

作　　者：毛维 范举胜 杜鸣 张金风 郑雪峰 王冲 马晓华 张进成 郝跃 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2016年第12期430-434,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61574112,61334002,61306017,61474091,and 61574110);the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.605119425012)

摘　　要：A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP （S-FP HEMT） shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP （S-FP HEMT） shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.

关 键 词：AlGaN/GaN HEMT source-connected T-shaped field-plate breakdown voltage FP efficiency 

分 类 号：TN386[电子电信—物理电子学] TN32