玻璃/Al_2O_3系MLCI介质材料的微观结构与性能研究  

Structure and properties of glass/Al_2O_3 system MLCI dielectric material

作　　者：刘剑 聂敏 

机构地区：[1]深圳顺络电子股份有限公司,广东深圳518110

出　　处：《电子元件与材料》2016年第12期26-30,共5页Electronic Components And Materials

摘　　要：采用烧结法制备了一种低温共烧(LTCC)K_2O/Na_2O-B_2O_3-SiO_2玻璃/Al_2O_3介质材料。系统研究了玻璃/Al_2O_3比例和烧结温度对介质材料结构与性能的影响。结果表明,材料烧结后只有Al_2O_3晶相,材料烧结属于液相烧结机制。介质的相对介电常数ε_r随Al_2O_3含量的增加而升高,Al_2O_3质量分数为35%时,经860℃烧结材料的性能最优:ε_r=5.93,tanδ=3.1×10^(–3),收缩率为16%,抗弯强度为159 MPa。所制备的介质材料能够用于高频MLCI领域。K_2O/Na_2O-B_2O_3-SiO_2 glass/Al_2O_3 dielectric material（low temperature co-fired ceramics） was prepared by sintering. The influence on material structure and properties with the change of proportion of galss/Al_2O_3 and sintering temperature were studied systematically. The results show that dielectric material sintered only contains Al_2O_3 phase, belonging to liquid phase sintering. The relativity permittivity（ε_r） of dielectric material increases with the increase of Al_2O_3 content. The bending strength can reach 159 MPa, and the shrinkage is 16%, reletivity permittiviyt is 5.93, tanδ=3.1×10^（–3）when the content of Al_2O_3 is 35%（mass fraction） and the sintering temperature is 860 ℃. Dielectric material can fulfil the field of high frequency MLCI.

关 键 词：高频MLCI K2O/Na2O-B2O3-SiO2 玻璃 AL2O3 介电性能 抗弯强度 

分 类 号：TM55[电气工程—电器]