一种pin结构光电器件的研究  

Study of a pin photoelectrical device

作　　者：袁晓贤[1] 隋国荣[1] 

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093

出　　处：《光学仪器》2016年第5期412-415,422,共5页Optical Instruments

基　　金：国家重点基础研究发展计划(2015CB352001)

摘　　要：pin器件在整流和探测领域都有着重要的潜在应用价值。为了提高器件伏安和光电探测性能,提出了一种新型的p-硅/i-氧化铝/n-掺铝氧化锌(AZO)结构器件,并利用原子层沉积技术(ALD)在低温下实现了器件制备。分析了器件的伏安特性,结果显示相比传统的pn结构器件,新结构在无光条件下实现了152的整流比。通过增加i层的沉积厚度,可以有效抑制遂穿效应,减小暗电流,提高光电检测的灵敏度,实现了比传统材料更高的光生电流灵敏度。The pin device has important potential applications in rectification and detection.To enhance the volt-ampere and photoelectrical detection characteristics of the device,a novel pSi/i-Al_2O_3/n-Al-doped-Al_2O_3(AZO)structure is proposed.In the experiment,the volt-a mpere and photoelectrical detection characteristics are investigated.Compared with the conventional pn device,the rectification ratio of 152 under the dark conditions is achieved.By controlling the deposited thickness of i-layer,the tunneling effect is effectively suppressed.The sensitivity of detection is greatly improved.The device presents better characteristics comparing to the traditional device.

关 键 词：PIN结构 原子层沉积(ALD) 整流比 遂穿效应 

分 类 号：TN2[电子电信—物理电子学] TN3