氧化石墨烯修饰碳糊电极循环伏安法测定铜离子  

Determination of Copper Ion by Cyclic Voltammetry with Graphene Oxide Modified Carbon Electrode

作　　者：陈红任 孙和鑫 朱春城[1] 

机构地区：[1]哈尔滨师范大学化学化工学院,哈尔滨150025

出　　处：《人工晶体学报》2016年第11期2634-2638,共5页Journal of Synthetic Crystals

基　　金：黑龙江省教育厅科技项目(1254CGZH35);国家自然科学基金(51572064)

摘　　要：采用改进的Hummers法合成氧化石墨烯,利用挤压填充法将氧化石墨烯修饰到碳糊电极内,成功地制备了氧化石墨烯修饰碳糊电极并探讨了在此电极上铜离子的循环伏安行为。实验表明:石墨粉与氧化石墨烯材料配比为8∶1,底液p H值为3.0,扫描速率为120 m V/s测定铜离子时为最优实验条件,氧化峰电流与铜离子浓度在4.0×10-8mol/L^1.0×10-3mol/L范围内呈良好的线性关系,检出限为4.559×10-8mol/L。氧化石墨烯修饰碳糊电极对铜离子的测定表现出良好的重现性与稳定性。Graphite oxide was prepared by modified Hummers method.Graphite oxide modified carbon paste electrode had been prepared by extrusion packing method.The study discussed the cyclic voltammetry behavior of copper ion.Experimental results show that when the material ratio of graphite and graphene oxide is 8 ∶ 1,the p H value is 3.0,scan rate is 120 m V/s,the experimental conditions were optimized.The peak current and the concentration of copper ion showed with varied linearly in the range of 4.0 × 10^- 8mol/L-1.0 × 10^- 3mol/L.The detection limit iis 4.559 × 10^- 8mol/L.Graphene oxide modified carbon paste electrode shows good reproducibility and stability.

关 键 词：氧化石墨烯 化学修饰碳糊电极 循环伏安法 铜离子 

分 类 号：O657[理学—分析化学]