氧化铝陶瓷基片高效减薄和超光滑抛光加工研究  

Process Research of Lapping Efficiently and Super Smooth Polishing on the Al_(2)O_3 Ceramics Substrate

作　　者：陈建新[1] 阎秋生[1] 潘继生[1] 

机构地区：[1]广东工业大学机电工程学院,广东广州510006

出　　处：《机电工程技术》2016年第10期37-43,共7页Mechanical & Electrical Engineering Technology

基　　金：国家自然科学基金项目(编号:51305082;51375097);广东省自然科学基金项目(编号:2015A030311044);广东省科技计划项目(编号:2013B010203022)

摘　　要：对氧化铝陶瓷基片进行了系统的单面研磨抛光和双面研磨抛光试验,结果表明,单面研磨抛光相对双面研磨抛光具有明显的效率优势,获得单面研磨的优化条件为:研磨压力15.19 kPa,研磨转速40 r/min,研磨液流量10 ml/min,研磨液浓度8wt%;以粒度W40、W20和W5的金刚石磨料在优化工艺条件下进行粗研磨、半精研磨和精研磨,减薄加工获得表面粗糙度Ra0.12μm的研磨片,进而采用W0.5的SiC磨料进行单面抛光可以获得平均表面粗糙度Ra10 nm的光滑表面。Single-side and double-side lapping and polishing on the Al2O3 ceramics substrate were studied systematically in this paper. Compared to double-side lapping and polishing,it turned out that single-side has more obvious advantages of efficiency. The optimizing conditions of single-side lapping,including the grinding pressure of 15.19 kPa,the grinding speed of 40r/min,the grinding fluid flow of 10ml/min and the grinding fluid concentration of 8wt%,were obtained by single factor experiment. The abrasive substrate with roughness of Ra 0.12μm was achieved by the way of rough lapping, half fine lapping and fine lapping, in which diamond abrasives with particle size of W40, W20 and W5 were used correspondingly under the optimal process conditions. Further, the smooth surface with average roughness of Ra 10nm was acquired by single-side polishing in the condition of SiC abrasive with particle size of W0.5.

关 键 词：氧化铝陶瓷基片 研磨 抛光 材料去除率 表面粗糙度 

分 类 号：TG580.68[金属学及工艺—金属切削加工及机床]