N掺杂TiO_2复合膜中N晶格位置转变  

Lattice position transformation of N in N-doping TiO_2 composite film

作　　者：刘光辉[1] 江晓红[1] 庄玉召 陆路德[1] PILIPTSOU D G ROGACHEV A V 

机构地区：[1]南京理工大学中国-白俄罗斯"真空等离子体技术"国际科学实验室,江苏南京210094 [2]白俄罗斯戈梅利国立大学,戈梅利246019

出　　处：《南京工业大学学报（自然科学版）》2016年第6期70-75,共6页Journal of Nanjing Tech University(Natural Science Edition)

基　　金：国家自然科学基金(51373077);科技部政府间合作项目(CB11-9;CB11-10)

摘　　要：采用磁过滤真空直流阴极弧蒸发工艺在石英基底上沉积N掺杂Ti薄膜，随后将其在马弗炉中以不同的退火温度（100～700℃）热处理制备N掺杂TiO2薄膜，采用X线衍射仪（XRD）、拉曼光谱仪（Raman）、X线光电子能谱（ XPS）和扫描电子显微镜（ SEM）分析表征。结果表明：初始态N掺杂Ti薄膜为包含少量TiN相的Ti薄膜，在300℃退火处理时，N掺杂Ti薄膜直接氧化生成N掺杂金红石相TiO2薄膜。初始态的N掺杂Ti薄膜表面平整、颗粒细密，与基底附着牢固，经700℃退火处理后，TiO2颗粒得到了良好的结晶生长，薄膜厚度增加了60％。当热处理温度为600℃时，N掺杂TiO2复合膜中替代型N开始转变为填隙型N，由于填隙型N具有更高的能级，这种N位置的转变进一步窄化了N掺杂TiO2的能带宽度，提高了对可见光的利用率。A simple method by annealing of N-doping Ti film to prepare N-doping TiO2 film was employed,where the N-doping Ti film was deposited by filtered cathode arc evaporation with quartz as substrate. N-doping TiO2 film was characterized by X-ray diffraction （ XRD ） , Raman spectrometer （Raman）,X-ray photoelectron spectroscopy（XPS） and scanning electron microscope （SEM）.Results showed that N-doping Ti film was consisted of Ti containing a small amount of TiN,and was converted to N-doping rutile phase TiO2 film directly as the annealing temperature was raised to 300 ℃. The initial state film was attached to substrate firmly. After annealing at 700 ℃,titanium oxide particles were well crystallized growth and the thickness of the film increased by 60%. When the heat treatment temperature improved to 600 ℃,interstitial N was emerged in TiO2 lattice,which was transferred from substitutional site.For the interstitial N energy state was slightly higher than that of substitutional N and the bandgap of N-doping TiO2 film could be further narrowed leading to an increased availability on visible light.

关 键 词：N掺杂Ti薄膜 N掺杂TIO2 薄膜 替代型N 填隙型N 

分 类 号：TB74[一般工业技术—材料科学与工程]