超声振动辅助固结磨粒抛光硅片表面形成机理及实验  

Mechanism of Surface Formation of Silicon Wafer Processed by Fixed Abrasive Polishing with Assistance of Ultrasonic Vibration and Experiments

作　　者：曾一凡[1] 杨卫平[1] 吴勇波 刘曼利[1] 

机构地区：[1]江西农业大学,南昌330045 [2]日本秋田县立大学

出　　处：《中国机械工程》2016年第23期3208-3214,共7页China Mechanical Engineering

基　　金：国家自然科学基金资助项目(51065011);国家留学基金委"地方合作项目"(201208360113)

摘　　要：基于超声加工所具有的加工效率和加工表面质量高等特性,提出了一种超声振动辅助固结磨粒化学机械复合抛光硅片新技术。对抛光工具及复合抛光实验系统的建立进行了描述,在此基础上开展硅片抛光表面形貌及材料去除机理的理论及实验研究,得到不同抛光力下的研究结果。所建立的理论模型及实验结果表明,超声振动辅助固结磨粒抛光有利于硅片表面质量及材料去除率的提高,且随着抛光力的增大,抛光表面质量下降,材料去除效果提高。Herein,based on the characteristics of higher machining efficiency and higher surface quality of ultrasonic vibration machining,a novel ultrasonic assisted fixed abrasive CMP（UFP）technique for silicon wafer was presented.The establishment of the experimental system for composite polishing was discussed in detail.In addition,the surface morphology and the material removal mechanism were investigated based on experiments and theory.Both of the theoretical model and experimental results show that with the assistance of ultrasonic vibration,the surface quality is enhanced,the material removal rate（MRR）increases,and the quality of polished surface decreases with increases of the polishing force,but the MRR increases.

关 键 词：超声振动 固结磨粒 表面形貌 材料去除 机理 

分 类 号：TG580[金属学及工艺—金属切削加工及机床]