半导体P-N型温差发电器件热电性能研究  

Research on thermoelectric properties of semiconductor P-N type thermoelectric power generation device

作　　者：王长宏[1] 李娜[1] 林涛[1] 吴浩东[1] 

机构地区：[1]广东工业大学材料与能源学院,广州510006

出　　处：《功能材料》2016年第12期12147-12151,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51306040);广东省科技计划资助项目(2014A010106027)

摘　　要：区熔法工艺制备的Ti2Be3温差发电材料,以PN结为研究对象。通过有限体积法对单对半导体PN结模型的温度、流场进行模拟,并用热阻分析法对传热过程进行计算,考虑热电转换过程受PN结空腔内气体对流、热传导和辐射的影响。研究结果表明,数值模拟和热阻分析法所得结果吻合,芯片传热过程中陶瓷基板热阻耗散46%的温差,且当热端温度达1 000K时,辐射传热量占总传热量的37%;因此对半导体PN结模型进行优化,适当降低陶瓷基底热阻有利于提高半导体PN结实际温差和应用价值。Ti2 Be3 thermoelectric materials were prepared through zone melting method,the PN j unction as the research obj ect.The temperature and flow field of the model of the single semiconductor PN j unction was simu-lated through finite volume method,and the heat transfer process was calculated through the thermal resistance analysis method,considering the influence of convection,heat conduction and radiation of the gas in the cavity of PN j unctions on thermoelectric conversion process.Research results show that：the results of numerical sim-ulation and thermal resistance analysis were consistent.The temperature diffrernce dissipation of the ceramic substrate thermal resistance reached to 46% in the chip heat transfe process,and when the temperature at the hot end was 1 000 K,radiation heat transfer accounts for 37% of the total heat transfer;So the optimization of semiconductor PN j unction model and appropriate to reduce the thermal resistance of the ceramic substrate are conducive to improve the actual temperature difference and application value of semiconductor PN junction.

关 键 词：温差发电器件 热电转换 热电性能 数值分析 

分 类 号：TK11[动力工程及工程热物理—热能工程]