基于IGBT有源门极控制的EMI抑制方法研究  

Research on EMI Suppression Method Based on IGBT Active Gate Control

作　　者：郑琦琦[1] 杜明星[1] 孙德明[1] 魏克新[1] 

机构地区：[1]天津理工大学天津市复杂系统控制理论及应用重点实验室,天津300384

出　　处：《电力电子技术》2016年第12期8-10,37,共4页Power Electronics

基　　金：天津市应用基础与前沿技术研究计划(14JCYBJC18400)~~

摘　　要：随着大功率绝缘栅双极型晶体管(IGBT)广泛应用于电力电子装置,其产生的电磁干扰(EMI)问题成为研究热点。IGBT有源门极控制(ACC),该控制方法在关断瞬间获得不同的反馈增益,进而抑制关断电压尖峰。在此分析电路的工作原理、系统稳定性及门极电压波形,利用Saber仿真软件建立IGBT串联电路模型,在传导干扰测试频率范围内,考虑寄生参数的情况下,仿真了IGBT在传统门极控制和AGC下的共模/差模(CM/DM)干扰。搭建实验平台,通过测试得到AGC下对系统产生的EMI抑制效果更好,对电力电子装置传导EMI的抑制分析具有重要意义。With high-power insulated gate bipolar transistor（IGBT） widely used in power electronic devices, electromagnetic interference（EMI） issue has become a hot topic.The IGBT active gate control（AC, C） achieves different feedback gains within the turn off transient, and inhibit the turn off peak voltage.The working principle of the circuit, system stability and gate voltage waveform are analysed, the simulation model of series-connected IGBT circuit is built up in the Saber, considering the influence of parasitic parameters, the initial disturbance and access of AGC common- mode/differential mode（CM/DM） interference are simulated in the conducted interference test frequency range.To build experimental platform,obtained by testing AGC to system produce EMI suppression better by contrast, it is also a great significance for suppressing and analyzing the transmission EMI on power electronic device.

关 键 词：绝缘栅双极型晶体管 有源门极控制 抑制方法 

分 类 号：TN32[电子电信—物理电子学]