基于结构函数的IGBT热特性研究  

Study of the Thermal Characteristics of IGBT Based on Structure Function

作　　者：熊文雯[1] 张小玲[1] 谢雪松[1] 任云[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电力电子技术》2016年第12期11-14,共4页Power Electronics

摘　　要：根据绝缘栅双极型晶体管(IGBT)器件工作时的传热原理,运用基于有限元法的分析软件ANSYS建立了1种IGBT三维热模型,进行瞬态仿真及结构函数分析。基于结构函数分析所得的热阻热容曲线,从芯片和焊料层接触面积、焊料层厚度、铜基板厚度和焊料层空洞等角度分析了可能影响器件热特性的因素。研究结果表明,相比传统的半导体器件热阻测试方法,结构函数法不仅能获得器件结到周围环境总体热阻值,还能无损地获取器件内部各结构层的热阻热容,分析器件内部结构变化,为研究和评估器件的热特性提供可靠的依据。Based on the principle of heat transfer IGBT devices at work, a novel IGBT 3-D thermal model is implemented by finite element analysis software.This model is used to transient simulation and structure function analysis. Aspects from different chip-solder contact area, solder thicknesses, Cu thickness and void, different models are simulated and used to analyze the factors that may affect the thermal performance of the device based on cumulative structure function curve.The results show that compared with the traditional thermal resistance test method of semiconductor devices, structure function method can not only obtain the junction-ambient thermal resistance, hut also the thermal resistance and capacity of each layer of devices.It can help to analyze the changes of internal structure and provide reliable basis for research and evaluation of thermal characteristics of semiconductor device.

关 键 词：绝缘栅双极型晶体管 热模型 热特性 结构函数 

分 类 号：TN32[电子电信—物理电子学]