Ⅲ-Ⅴ族半导体纳米晶体表面对氮分子的吸附作用  

Study on the Adsorption Property to N_2 on the Surface of Ⅲ-Ⅴ Semiconductor Nanocrystals

作　　者：王立民[1] 刘振刚[2] 董守义[3] 于美燕[2] 郝霄鹏[3] 崔得良[3] 徐现刚[3] 王琪珑[2] 

机构地区：[1]山东大学微纳材料中心,济南250100 [2]山东大学化学与化工学院,济南250100 [3]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2002年第4期350-353,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金 (No .90 10 10 16;2 9773 0 2 6和 60 0 2 5 40 9) ;山东省科技攻关项目;教育部骨干教师资助计划资助项目

摘　　要：研究了Ⅲ Ⅴ族半导体纳米晶表面氧化状态对它们表面活性的影响 ,并比较了具有不同阳离子的纳米晶体对氮分子吸附能力的差异 ,对这些现象进行了解释 ;用XPS、红外光谱等测试手段对样品进行了性质表征。结果表明 :当Ⅲ Ⅴ族半导体纳米晶表面氧化严重时 ,其表面活性明显降低 ;含Ga的Ⅲ Ⅴ族半导体纳米晶对氮分子的吸附作用明显强于含In的纳米晶。这是因为Ga能够与氮分子形成较强的配位键 。The effect of surface oxidation on the adsorption property of Ⅲ Ⅴ semiconductor nanocrystals was investigated,and the difference in the N 2 adsorption ability of nanocrystals with different kinds of cations was also analyzed.The nanocrystals before and after adsorbing N 2 were characterized by XRD,XPS,IR and TG measurements.The results showed that the surface adsorption ability of GaP nanocrystal is much higher than that of InP nanocrystal,because there is rather strong coordinate bond formed between Ga and N.Furthermore,the surface adsorption ability of GaP to N 2 decreased greatly when surface oxidation took place.

关 键 词：Ⅲ-Ⅴ族 半导体纳米晶体 氮分子 吸附作用 表面氧化 活化 配位键 

分 类 号：TN304.22[电子电信—物理电子学] O793[理学—晶体学]